GaN Systems New Half-Bridge Designs Increase Output Power More Than 30%
OTTAWA, Ontario, December 16, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the launch of its next generation Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high power, high efficiency automotive...
THE 2021 PREDICTIONS IN POWER ELECTRONICS
OTTAWA, ONTARIO, December 9, 2020: As 2020 comes to a close, we will undoubtedly look back on the past twelve months as a time in which disruption was the hallmark. Amid the unprecedented socioeconomic upheaval brought about by Covid-19, organizations have had to pivot and str...
GaN Systems and ON Semiconductor Release 100V High-Speed, Half Bridge Evaluation Board
OTTAWA, Ontario, December 3, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration with ON Semiconductor (OnSemi), a world-leading supplier...