New Higher Performance, Lower Cost Transistors Debut from GaN Systems

Key Takeaways

  • GaN Systems introduced two new transistors  packaged in a standard 8×8 mm PDFN package.
  • The GS-065-011-2-L allows users to reduce the cost per watt of delivered powered in 45W to 150W applications.
  • The GS-065-030-2-L is the first GaN product on the market that enables designers to get the advantages of low-cost GaN in applications up to the 3,000W power level.

OTTAWA, Ontario, August 10, 2021 – GaN Systems, the global leader in GaN power semiconductors, today introduced two new transistors in the industry’s broadest portfolio of GaN power transistors. The transistors are packaged in a standard 8×8 mm PDFN package. The GS-065-011-2-L allows users to reduce the cost per watt of delivered powered in 45W to 150W applications and the GS-065-030-2-L is the first GaN product on the market that enables designers to get the advantages of low-cost GaN in applications up to the 3,000W power level.  These new parts add to the GaN Systems family of low-cost GaN transistors that empower designers to take the next step in improved performance in efficiency, thermal management, and power density with increased design flexibility and cost effectiveness to meet new demands from consumer, industrial, and data center customers. 

These new transistors feature lower on-resistance, increased robustness, and thermal performance, higher VDS(transient) rating, and an industry-standard form factor that eases customer adoption, scalability, and commercialization.

 The GS-065-011-2-L is a 650 V, 11 A, 150 mΩ bottom-side cooled transistor ideal for consumer electronics applications such as chargers and adapters, including higher power adapter designs that benefits from the transistor’s improved thermal performance. The GS-065-030-2-L is a 650 V, 30A, 50 mΩ bottom-side cooled transistor, which features the lowest RDS(on) in GaN Systems' PDFN product family. Lower RDS(on) means lower power loss and higher power rating, resulting in higher efficiency and power density. The GS-065-030-2-L GaN transistor is perfect for data center, industrial, and 5G applications such as telecom and server SMPS, motor drives, energy storage systems, and Bridgeless Totem Pole PFC solutions. 

"GaN has made its mark in power electronics – in size, weight, efficiency, cost, and performance – and we are proud of the advancements we have made with every new generation of products so that customers can maximize the benefits of GaN. With these new GS-065-011-2-L and GS-065-030-2-L products, our customers can leverage the benefits that come from smaller, more efficient, and more cost-effective power electronics," said Jim Witham, CEO at GaN Systems.

The products are now available for purchase at GaN Systems’ distributors. For more information, please visit the GaN Systems’ product page to download datasheets and more.

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About GaN Systems

GaN Systems is the global leader in GaN power semiconductors with the most extensive transistors portfolio that uniquely addresses the needs of today's most demanding industries, including consumer electronics, data center servers, and power supplies, renewable energy systems, industrial motors, and automotive electronics. As an industry-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems. The company's award-winning products provide system design opportunities free from the limitations of yesterday's silicon. By changing the transistor performance rules, GaN Systems enables power conversion companies to revolutionize their industries and transform the world. 

For more information, please visit: www.gansystems.com or on Facebook, Twitter and LinkedIn and scan this QR code for our WeChat.

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Key Takeaways

  • GaN Systems introduced two new transistors  packaged in a standard 8×8 mm PDFN package.
  • The GS-065-011-2-L allows users to reduce the cost per watt of delivered powered in 45W to 150W applications.
  • The GS-065-030-2-L is the first GaN product on the market that enables designers to get the advantages of low-cost GaN in applications up to the 3,000W power level.

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Quotes

GaN has made its mark in power electronics – in size, weight, efficiency, cost, and performance – and we are proud of the advancements we have made...
Jim WithamGaN Systems CEO

Related Bios

Jim Witham
GaN Systems CEO
Jim Witham currently serves as CEO of GaN Systems. He has more than 30 years of experience in the power electronics industry, including executive and management roles at Tyco Electronics, Aegis Semiconductor, Fultec Semiconductor, and Neoconix. He has demonstrated a strong track record of achieving company and market growth with an unrelenting vision in bringing the newest electronics technology to market.

Under his leadership, GaN Systems has become the global leader in GaN (gallium nitride) power semiconductors with offices in North America, Europe, and Asia serving more than 2,000 customers worldwide. Prior to GaN Systems, he was CEO of Neoconix where he successfully implemented strategic changes which increased Neoconix revenue, resulting in the company’s acquisition by Unimicron Technology in 2014.

Jim also served as CEO of Fultec Semiconductor (now Bourns), leading the manufacture of circuit protection devices using high voltage silicon, silicon carbide, and GaN transistors. Jim has held VP Sales & Marketing roles at both Aegis Semiconductor (now II-VI) and Genoa (now Finisar). He was also the General Manager of the Tyco Electronics – Raychem Interconnect Division and the Japan-based Director of Asia Sales & Marketing for Raychem’s Circuit Protection Division.

Previously, Jim held the unique position of Engineering Specialist for General Dynamics’ Space System Division, where he designed fluid systems for the Space Shuttle and was on Mission Control for interplanetary missions. He holds an MBA from Harvard and both MS and BS with distinction in Mechanical Engineering from Stanford.
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Contacts

Mary Placido
mary@triercompany.com
4152183627
Media Contact - Trier and Company for GaN Systems