GaN Systems Signs Semiconductor Capacity Agreement with BMW

Key Takeaways

GaN Systems amd BMW Group sign a Capacity Agreement for GaN Systems’ high-performance, automotive-grade GaN power transistors. Under the terms of the agreement, GaN Systems will provide capacity for multiple applications in series production.
This is the first capacity agreement to date executed by an automotive manufacturer for GaN power transistors. This multi-$100 million agreement demonstrates BMW’s commitment to innovation and sustainability.
BMW’s relationship with GaN Systems began more than four years ago when BMW’s engineers found that small size, lightweight, low-cost onboard chargers, DC/DC converters, and traction inverters were enabled by GaN.

OTTAWA, Ontario, September 14, 2021 – GaN Systems, the global leader in GaN power semiconductors, today announced the signing of a comprehensive Capacity Agreement with BMW Group for GaN Systems’ high-performance, automotive-grade GaN power transistors, which increase the efficiency and power density of critical applications in electric vehicles.

GaN power semiconductors are a key ingredient to achieve the small size, lightweight, and high efficiency required in the next generation of high-performance electric vehicles. Under the terms of the agreement, GaN Systems will provide capacity for multiple applications in series production. The guaranteed volumes by GaN Systems are a key building block for reliability in the supply chain for automotive players like BMW.

“Electric vehicles represent the future of transportation, and we are delighted to continue to support BMW with our design and production capacity,” stated Jim Witham, CEO of GaN Systems. “This multi-$100M agreement demonstrates BMW’s commitment to innovation and sustainability.”

BMW’s relationship with GaN Systems began more than four years ago when BMW’s engineers found that small size, lightweight, low-cost onboard chargers, DC/DC converters, and traction inverters were enabled by GaN. This led to investment from BMW’s venture capital firm, BMW I Ventures, to support and accelerate the automotive qualification of the GaN technology.

“The close collaboration among GaN Systems and BMW’s engineers has helped to solidify the technology for automotive series production, resulting in the most advanced GaN power transistors in the marketplace today,” said Kasper Sage, managing partner BMW i Ventures. “As electric vehicles become more prominent, the demand for critical semiconductor components is only going to increase, thereby making strategic partnerships with suppliers like GaN Systems even more important.”

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About GaN Systems

GaN Systems is the global leader in GaN power semiconductors with the most extensive transistors portfolio that uniquely addresses the needs of today’s most demanding industries, including consumer electronics, data center servers and power supplies, renewable energy systems, industrial motors, and automotive electronics. As a market-leading innovator, GaN Systems makes it possible to design smaller, lower cost, more efficient power systems. The company’s award-winning products provide system design opportunities free from the limitations of yesterday’s silicon. By changing the rules of transistor performance, GaN Systems is enabling power conversion companies to revolutionize their industries and transform the world.

For more information, please visit: www.gansystems.com or on Facebook, Twitter and LinkedIn and scan this QR code for our WeChat.

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Key Takeaways

GaN Systems amd BMW Group sign a Capacity Agreement for GaN Systems’ high-performance, automotive-grade GaN power transistors. Under the terms of the agreement, GaN Systems will provide capacity for multiple applications in series production.
This is the first capacity agreement to date executed by an automotive manufacturer for GaN power transistors. This multi-$100 million agreement demonstrates BMW’s commitment to innovation and sustainability.
BMW’s relationship with GaN Systems began more than four years ago when BMW’s engineers found that small size, lightweight, low-cost onboard chargers, DC/DC converters, and traction inverters were enabled by GaN.

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Related Bios

Jim Witham

CEO & Co-Founder, GaN Systems

Jim Witham currently serves as CEO of GaN Systems. He has more than 30 years of experience in the power electronics industry, including executive and management roles at Tyco Electronics, Aegis Semiconductor, Fultec Semiconductor, and Neoconix. He has demonstrated a strong track record of achieving company and market growth with an unrelenting vision in bringing the newest electronics technology to market.
Under his leadership, GaN Systems has become the global leader in GaN (gallium nitride) power semiconductors with offices in North America, Europe, and Asia serving more than 2,000 customers worldwide. Prior to GaN Systems, he was CEO of Neoconix where he successfully implemented strategic changes which increased Neoconix revenue, resulting in the company’s acquisition by Unimicron Technology in 2014.
Jim also served as CEO of Fultec Semiconductor (now Bourns), leading the manufacture of circuit protection devices using high voltage silicon, silicon carbide, and GaN transistors. Jim has held VP Sales & Marketing roles at both Aegis Semiconductor (now II-VI) and Genoa (now Finisar). He was also the General Manager of the Tyco Electronics – Raychem Interconnect Division and the Japan-based Director of Asia Sales & Marketing for Raychem’s Circuit Protection Division.
Previously, Jim held the unique position of Engineering Specialist for General Dynamics’ Space System Division, where he designed fluid systems for the Space Shuttle and was on Mission Control for interplanetary missions. He holds an MBA from Harvard and both MS and BS with distinction in Mechanical Engineering from Stanford.

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